Focused Ion Beam Microfabrication
Focused Ion Beam Microfabrication
复制标题
聚焦离子束微加工
DOI：
--
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
J. Melngailis
中科院分区：
文献类型：
--
作者：
J. Melngailis
在微细加工中最常用的离子-固体相互作用的特征是注入、溅射（离子铣削）和诱导化学反应。聚焦离子束制造的新奇在于，这些工艺中的大多数现在可以在不使用掩模或抗蚀剂的情况下以优于0.1 μm的分辨率进行。对于注入，可用的物质包括Si和GaAs的掺杂剂（例如B、As、Be和Si）。能量高达300千电子伏的实现，如果使用双电离的物种。聚焦离子束系统可以以0.1 μm的精度提供所需的剂量，并与晶圆上的现有特征对准。到目前为止，已经报道了这种独特的无掩模无抗蚀剂图案化能力的许多应用，包括：晶体管的阈值调节、用渐变掺杂分布制造的晶体管和可调谐古恩二极管。此外，聚焦离子束有望与电子束竞争，用于在抗蚀剂中写入图案。
The features of the ion-solid interaction most often used in microfabrication are implantation, sputtering (ion milling), and induced chemical reaction. The novelty of focused ion beam fabrication is that most of these processes can now be carried out with better than 0.1 μm resolution without the use of mask or resist. For implantation the species available include the dopants of Si and GaAs (such as B, As, Be, and Si). Energies up to 300 keV are achieved if doubly ionized species are used. The focused ion beam systems can deliver a desired dose with 0.1 μm accuracy aligned to existing features on the wafer. So far, a number of applications of this unique maskless resistless patterning capability have been reported, including: threshold adjust of transistors, transistors fabricated with graded doping profiles and tunable Gunn diodes. In addition, focused ion beams promise to be competitive with e-beams for pattern writing in resist.