Fabrication of air bridges using electron beam lithography
Fabrication of air bridges using electron beam lithography
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DOI:
10.1116/1.1539062
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发表时间:
2003-01
影响因子:
1.4
通讯作者:
Michael A. Gritz;M. Metzler;J. Moser;D. Spencer;G. Boreman
中科院分区:
文献类型:
--
作者:
Michael A. Gritz;M. Metzler;J. Moser;D. Spencer;G. Boreman
MEMS devices are designed and fabricated by techniq similar to those of very large scale integration ~VLSI! and can be manufactured by traditional batch processing m ods. The ease of manufacture and the increased develop of VLSI MEMS devices allow engineers to miniaturize se sors and transducers. One example of such an advance is in the MEMS accelerometer, now one of the largest sin MEMS applications with its incorporation in air bags. A MEMS device does not necessarily imply that the system operating at rf frequencies. In many MEMS devices a components, the microelecromechanical operation is u simply for actuation or adjustment of another rf device. O example of such a device would be a variable capacitor simple switch. For the air bridge shown in Fig. 1, the bottom metal co tact forms a coplanar waveguide ~CPW! transmission line. A rf switch has already been designed by using a distribu MEMS transmission line~DMTL !. For DMTL, the air bridges over the center conductor are operated in a par configuration. When a bias voltage is applied to the cen conductor of the CPW transmission line, charge distribu so that an electrostatic force occurs between the center ductor and the air bridge, which attracts the bridge do