CdTe nanorod arrays on ITO: From microstructure to photoelectrical property
CdTe nanorod arrays on ITO: From microstructure to photoelectrical property
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DOI：
10.1021/jp905577u
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发表时间：
2009-09
影响因子：
3.7
通讯作者：
Xina Wang;Juan Wang;Minjie Zhou;Haojun Zhu;Hao Wang;X. Cui;Xudong Xiao;Quan Li
中科院分区：
文献类型：
--
作者：
Xina Wang;Juan Wang;Minjie Zhou;Haojun Zhu;Hao Wang;X. Cui;Xudong Xiao;Quan Li
利用无催化剂热蒸发法在ITO上制备了CdTe纳米棒阵列。尽管在纳米棒中观察到堆垛层错，但在室温光致发光测量期间，它们在1.5eV处显示出强烈的近带边发射，具有79 meV的窄的半峰全宽和可忽略的深能级发射。基于排列的阵列-on-ITO配置的器件表现出对可见光的优异的光响应，这归因于材料的大吸收系数，并且还表明纳米棒的良好的电子结构质量。
CdTe nanorod arrays on ITO have been demonstrated using a catalyst-free thermal evaporation method. Despite the stacking faults observed in the nanorods, they show intense near band edge emission at ∼1.5 eV with a narrow full width at half-maximum of 79 meV and negligible deep-level emission during the room temperature photoluminescence measurement. The device based on the aligned array-on-ITO configuration demonstrates excellent photoresponse to the visible light, which is ascribed to the large absorption coefficient of the material and also suggests good electronic structure quality of the nanorods.