Enhanced output voltage generation via ZnO nanowires (50 nm): Effect of diameter thinning on voltage enhancement
Enhanced output voltage generation via ZnO nanowires (50 nm): Effect of diameter thinning on voltage enhancement
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DOI：
10.1016/j.jpcs.2017.01.006
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发表时间：
2017-05-01
影响因子：
4
通讯作者：
Jabeen, Musarrat
中科院分区：
文献类型：
--
作者：
Ahmad, Mansoor;Iqbal, Muhammad Azhar;Jabeen, Musarrat
在低温和真空条件下，采用易水生长技术在氧化铟锡（ITO）涂层的聚对苯二甲酸乙二醇酯（PET）衬底上生长了50 nm的ZnO纳米线。在ZnO纳米线生长之前，在柔性衬底上生长了纯六方纤锌矿结构的种子层。利用扫描电子显微镜（SEM）研究了纳米结构的表面形貌。XRD图证实了材料的垂直生长取向。微小的外部机械力（类似于50nn）产生周期性的电压峰值。对2.5 nm和7.5 nm厚的溅射Pt电极进行了测试，获得了输出电压。50nm ZnO纳米线的最大输出电压为2.717伏，输出功率密度为397.1 mW/cm(2)。通过压缩直径，我们减少了通过纳米线的反向漏电流，提高了输出电压。
50 nm ZnO nanowires were grown on indium tin oxide (ITO) coated poly ethylene terephthalate (PET) substrates by adapting facile aqueous growth technique using low temperature and vacuum conditions. Prior to growth of ZnO nanowires, pure hexagonal wurtzite structured seed layer was grown on flexible substrates. Surface morphology of nanostructure has been examined by scanning electron microscopy (SEM). Vertical growth orientation has been evidenced in XRD patterns. Minute external mechanical force (similar to 50 nN) has produced periodic voltage peaks. 2.5 nm and 7.5 nm thick sputtered Pt electrode have been tested to obtain output voltages. 50 nm ZnO nanowires has produced a maximum output voltage of 2.717 volts having an output power density of 397.1 mW/cm(2). By squeezing the diameter, we have reduced reverse leakage current through nanowires and enhanced output voltage.