Ion bombardment in a normal-gate FED
Ion bombardment in a normal-gate FED
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DOI：
10.1016/j.apsusc.2004.06.097
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发表时间：
2005-04
影响因子：
6.7
通讯作者：
Yingbin Gao;Xiaobing Zhang;W. Lei;Min Liu;Yuning Zhang;D. Engelsen
中科院分区：
文献类型：
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作者：
Yingbin Gao;Xiaobing Zhang;W. Lei;Min Liu;Yuning Zhang;D. Engelsen
由于FED中的电子-气体碰撞电离，带正电的离子轰击阴极。这会破坏场发射体并导致不稳定性。在这项研究中，我们选择了一个正常门的子细胞来计算离子轰击（IB）。在均匀发射和环形发射两种情况下，研究了离子轰击和阴极损伤过程。
Due to the electron-gas collision ionization in a FED, positively charged ions bombard the cathode. This can destroy the field emitters and cause instabilities. In this study we have selected a normal-gate sub-cell to calculate the ion bombardment (IB). In the cases of uniform emitting and ring emitting, the process of ion bombardment and cathode damage has been investigated.