Diode and photocurrent effect in ferroelectric BaTiO3−δ
Diode and photocurrent effect in ferroelectric BaTiO3−δ
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DOI：
10.1063/1.3569619
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发表时间：
2011-04
影响因子：
3.2
通讯作者：
C. Won;Y. A. Park;Kyungdong Lee;H. Ryu;N. Hur
中科院分区：
文献类型：
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作者：
C. Won;Y. A. Park;Kyungdong Lee;H. Ryu;N. Hur
漏电流一直被认为是铁电存储器的主要问题之一。然而，最近关于铁电单晶的单向电输运和铁电隧道结中的巨型隧道电阻的研究表明，有可能利用这种不受欢迎的泄漏电流。在这里，我们介绍了氧缺乏的BaTiO_3−δ单晶中的Diodelke输运和显著增强的光电流效应，这些效应主要取决于铁电极化的方向。载流子掺杂的常规铁电材料中的二极管效应可能为非破坏性读出普通铁电存储器中的偏振态提供了一种替代方法。
The leakage current has been regarded as one of the major problems in ferroelectric memories. However, recent studies on the unidirectional electric transport through a ferroelectric single crystal and the giant tunnel electroresistance in ferroelectric tunnel junctions suggest a possibility to utilize this undesirable leakage current. Here, we present the diodelike transport and the significantly enhanced photocurrent effects in oxygen-deficient BaTiO3−δ single crystals, which are mainly dependent on the direction of ferroelectric polarization. Diode effects in the carrier doped conventional ferroelectrics may suggest an alternative way for the nondestructive readout of polarization states in common ferroelectric memories.