High Temperature Piezoresistance of Silicon Carbide and Galium Nitrede Materials
High Temperature Piezoresistance of Silicon Carbide and Galium Nitrede Materials
复制标题
碳化硅和氮化镓材料的高温压阻
DOI：
10.1109/jeds.2022.3150915
复制
发表时间：
2022
影响因子：
2.3
通讯作者：
N.Nakano
中科院分区：
文献类型：
--
作者：
T.Sugiura;N.Takahashi;R.Sakota;K.Matsuda;N.Nakano
我们研究了碳化硅（SiC）和氮化镓（GaN）晶体的压阻系数对温度的依赖关系，这两种晶体由于其宽带隙特性而成为高温应用的潜在材料。通过对实验电阻变化进行热力学数值模拟，得到了这些材料的压阻系数随温度的变化。本文报道了4H-SiC和GaN在高温环境下的压阻系数，这方面的研究还不够充分。结果表明，压阻系数的温度依赖性与电离能密切相关，高电离能使压阻系数在高温下保持稳定。我们提出的温度建模方法有助于利用材料在室温下的值和电离能来预测压阻系数对温度的依赖关系，这有助于在器件模拟过程中评估不同温度下的压阻效应。
We examine the temperature dependence of the piezoresistive coefficients of silicon carbide (SiC) and gallium nitride (GaN) crystals, which are prospective materials for high-temperature applications owing to their wide-bandgap properties. The temperature-dependent piezoresistive coefficients of these materials were obtained by modeling experimental resistance changes using thermomechanical numerical simulations. This work reports the piezoresistive coefficients of 4H-SiC and GaN at the high-temperature environments, which are still not well researched. The results revealed that the temperature dependences of piezoresistive coefficients were strongly related to the ionization energy, and a high ionization energy stabilized the values of the piezoresistive coefficients at high temperatures. Our proposed temperature modeling method helps in predicting the temperature dependence of the piezoresistive coefficient using the value at the room temperature and the ionization energy of the material, which is useful for evaluating the piezoresistive effect at different temperatures during device simulations.