Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se2 Thin Films
Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se2 Thin Films
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DOI：
10.1002/pssr.202100042
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发表时间：
2021-05
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影响因子：
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通讯作者：
D. Abou‐Ras;Aleksandra Nikolaeva;M. Krause;L. Korte;H. Stange;R. Mainz;Ekin Simsek Sanli;P. V. van Aken;T. Sugaya;J. Nishinaga
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文献类型：
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作者：
D. Abou‐Ras;Aleksandra Nikolaeva;M. Krause;L. Korte;H. Stange;R. Mainz;Ekin Simsek Sanli;P. V. van Aken;T. Sugaya;J. Nishinaga
高效Cu（In，Ga）Se2（CIGS）薄膜太阳能电池基于多晶CIGS吸收层，其包含晶界、堆垛层错和位错。虽然CIGS层中的平面缺陷已经被广泛研究，但关于位错对CIGS吸收体的光电性质的影响仍然知之甚少。在这里，在这些薄膜中的位错的光电不活动的证据，在晶界的情况相反。这种独特的行为是解释了广泛的元素再分布检测周围的位错核心，这是连接与位错应变场，可能导致向带边的缺陷状态的转变。
High‐efficiency Cu(In,Ga)Se2 (CIGS) thin‐film solar cells are based on polycrystalline CIGS absorber layers, which contain grain boundaries, stacking faults, and dislocations. While planar defects in CIGS layers have been investigated extensively, little is still known about the impact of dislocations on optoelectronic properties of CIGS absorbers. Herein, evidence for an optoelectronic inactivity of dislocations in these thin films is given, in contrast to the situation at grain boundaries. This unique behavior is explained by the extensive elemental redistribution detected around dislocation cores, which is connected with the dislocation strain field, probably leading to a shift of defect states toward the band edges.