Delocalization of the f electron in CexLa1－xRu2Si2 - the de Haas-van Alphen effect measurement
Delocalization of the f electron in CexLa1－xRu2Si2 - the de Haas-van Alphen effect measurement
复制标题
CexLa1－xRu2Si2 中 f 电子的离域 - 德哈斯-范阿尔芬效应测量
DOI：
10.1088/1742-6596/391/1/012042
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T Terashima and S Uji
中科院分区：
文献类型：
--
作者：
Y Matsumoto;N Kimura;T Komatsubara;H Aoki;N Kurita;T Terashima and S Uji
本文报道了通过de Haas-van Alphen （dHvA）效应首次观测到从没有f电子的La化合物（LaRu{sub 2}Si{sub 2}）到有f电子的Ce化合物（CeRu{sub 2}Si{sub 2}）的连续费米表面（FS）变化。dHvA频率随Ce浓度变化平稳，无间断变化。结果表明，Ce浓度的有效质量和信号幅值与费米表面片密切相关，有效质量在x{sub c}处增强（= 0.91），而信号幅值在x{sub c}附近或x{sub c}至x{约}0.8之间减小。
We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu{sub 2}Si{sub 2}) with no f electron to Ce compound (CeRu{sub 2}Si{sub 2}) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward x{sub c} (= 0.91) and the signal amplitude reduces around x{sub c} or somewhere between x{sub c} and x {approx} 0.8.