Self-heating in ultra-wide bandgap n-type SrSnO3 thin films
Self-heating in ultra-wide bandgap n-type SrSnO3 thin films
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DOI：
10.1063/5.0105962
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发表时间：
2022-10
影响因子：
4
通讯作者：
Prafful Golani;C. Saha;Prakash P. Sundaram;Fengdeng Liu;T. Truttmann;V. Chaganti;B. Jalan;U. Singisetti;S. Koester
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文献类型：
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作者：
Prafful Golani;C. Saha;Prakash P. Sundaram;Fengdeng Liu;T. Truttmann;V. Chaganti;B. Jalan;U. Singisetti;S. Koester
这项工作报告的量化上升的通道温度由于自加热在两个终端SrSnO 3薄膜器件下的电偏置。利用脉冲电流-电压（I-V）测量，通过提取沟道温度与耗散功率之间的关系来确定薄膜的热阻。对于厚度为26 nm、面积为200 μm2的n掺杂SrSnO 3沟道，获得了260.1 ± 24.5 K mm/W的热阻。对于0.5 W/mm的适度耗散功率，沟道温度上升到176 °C，该值在更高的功率水平下进一步增加。进行了电热模拟，这表明在存在和不存在自加热的情况下，模拟和实验I-V特性之间的密切协议。所提出的工作对于基于钙钛矿的大功率电子器件的发展至关重要。
This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I–V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.