Critical electric field for Stark-ladder formation in a GaAs/AlAs superlattice.
Critical electric field for Stark-ladder formation in a GaAs/AlAs superlattice.
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GaAs/AlAs 超晶格中 Stark 阶梯形成的临界电场。
DOI：
10.1103/physrevb.48.2787
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Fujiwara
中科院分区：
文献类型：
--
作者：
Tanaka;Nakayama;Nishimura;Kawashima;Fujiwara
我们系统地测量了嵌入在p-i-n结构中的GaAs (3.2 nm)/AlAs （0.9 nm）超晶格在77 K和不同电场条件下的电反射光谱，以研究其从微带态到Stark-ladder态的转变。结果表明，重空穴跃迁的Stark-ladder临界电场与轻空穴跃迁的临界电场不同，临界电场的比值与总小带宽度的比值一致。从传递矩阵分析的角度讨论了临界电场
We have systematically measured the electroreflectance spectra of a GaAs (3.2 nm)/AlAs (0.9 nm) superlattice embedded in a p-i-n structure at 77 K under various electric-field conditions to investigate the transformation from miniband states to Stark-ladder states. It is demonstrated that the critical electric field for Stark-ladder formation for the heavy-hole transition is different from that for the light-hole transition, and that the ratio of the critical electric fields is in agreement with that of the total miniband widths. The critical electric field is discussed from a transfer-matrix analysis