Single electron–hole pair sensitive silicon detector with surface event discrimination

Single electron–hole pair sensitive silicon detector with surface event discrimination
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具有表面事件辨别功能的单电子-空穴对敏感硅探测器

DOI:
10.1016/j.nima.2020.163757
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发表时间:
2020
期刊:
Detectors and Associated Equipment
影响因子:
--
通讯作者:
Pinckney, H. Douglas
Pinckney, H. Douglas
中科院分区:
--
文献类型:
--
作者:
Hong, Ziqing;Ren, Runze;Kurinsky, Noah;Figueroa-Feliciano, Enectali;Wills, Lise;Ganjam, Suhas;Mahapatra, Rupak;Mirabolfathi, Nader;Nebolsky, Brian;Pinckney, H. Douglas

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我们在单面、无接触、厚度为1 cm×1 mm、工作温度为48 mK、基线能量分辨率为3 eV的硅晶体中展示了单电子-空穴对的分辨率。这种晶体可以在超过V的电压下工作,导致测量的电荷分辨率为0.06电子-空穴对。该器件的高铝覆盖率(70%)允许区分表面事件并将发生在探测器中心附近的事件与发生在边缘附近的事件分开。我们使用这种辨别能力来表明,在类似设计的以前的探测器中看到的非量子化暗事件很可能是由沿设备侧壁的电荷泄漏主导的。
We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cmby 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess ofV, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage (70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device.
低质量极限:具有 eV 级能量分辨率的暗物质探测器
DOI: 10.2172/1472104
发表时间: 2018
期刊: Physical review. B, Condensed matter
影响因子: --
作者:
Noah A. Kurinsky
通讯作者: Noah A. Kurinsky
DOI: --
发表时间: 1989
期刊:
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影响因子: 5
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SENSEI:首次对表面运行的亚 GeV 暗物质进行直接检测约束。
DOI: 10.1103/physrevlett.121.061803
发表时间: 2018
影响因子: 8.6
作者:
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发表时间: 2015-09
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影响因子: --
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