Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I
Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I
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垂直GaN功率器件：器件原理和制造技术-第1部分
DOI：
10.1109/ted.2021.3083239
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发表时间：
2021-07-01
影响因子：
3.1
通讯作者：
Zhao, Yuji
中科院分区：
文献类型：
--
作者：
Fu, Houqiang;Fu, Kai;Zhao, Yuji
近年来，垂直氮化镓（GaN）功率器件取得了巨大的发展，这是一类新的器件技术，可能是下一代高性能电力电子器件的关键推动因素。在这篇综述中，我们讨论了垂直GaN功率器件的最新进展，强调了其重要的器件设计原理和制造工艺。第一部分介绍了垂直GaN器件的基本设计原理，以肖特基势垒二极管（SBD）和p-n二极管为例。我们提供了一个全面的审查和深入的分析，其基本结构，制造工艺和器件物理。材料工程，包括缓冲层和漂移层的设计，和设备工程，包括各种边缘终端的方法，阐明。关键器件的主题，包括雪崩击穿和泄漏机制的垂直GaN功率器件，也进行了讨论。我们还研究了各种方法，并提供了所获得的关键知识的详细描述。这篇及时的评论为电力电子界提供了有价值的信息，并可以激励研究人员在这个新兴和令人兴奋的研究领域进行未来的跨学科合作。
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive review, we discuss the recent progress made on vertical GaN power devices, highlighting their important device design principles and fabrication processes. Part I of the two-part review series introduces the basic design principles of vertical GaN devices using Schottky barrier diodes (SBDs) and p-n diodes as examples. We provide a comprehensive review and in-depth analysis on their basic structures, fabrication processes, and device physics. Materials engineering, including buffer layer and drift layer design, and device engineering, including various edge termination methods, are elucidated. Key device topics, including avalanche breakdown and leakage mechanisms of vertical GaN power devices, are also discussed. We also examine various approaches and provide detailed descriptions of the key knowledge obtained. This timely review provides valuable information for the power electronics community and can inspire researchers for future interdisciplinary collaborations in this emerging and exciting research field.