High Performance Organic Field Effect Transistor Withanovel Top-And-Bottom Contact (TBC) Structure
High Performance Organic Field Effect Transistor Withanovel Top-And-Bottom Contact (TBC) Structure
复制标题
具有新型上下接触 (TBC) 结构的高性能有机场效应晶体管
DOI：
10.1557/proc-736-d7.7
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
T. Kamata
中科院分区：
文献类型：
--
作者：
M. Yoshida;S. Uemura;S. Hoshino;T. Kodzasa;S. Haraichi;T. Kamata
研究了新型有机半导体层顶底接触场效应晶体管(TBCFET)的特性。制作了沟道长度约为0.5μm的TBCFET(L)，并对其晶体管性能进行了测试。与沟道长度为100μm的普通平面型FET相比，TbCFET的输出漏-源电流(Ids)高1~2个数量级。另一方面，由于TBC结构，TBCFET中的关断电流往往会变得更大。因此，为了解决这个断流问题，我们特意在上电极/半导体界面形成了肖特基结。结果，截止电流比肖特基结形成前小了约2个数量级。
We studied the features of the newly developed Top and Bottom Contact Field Effect Transistor (TBCFET) with organic semiconductor layers. TBCFETs with ca.0.5μm channel length (L) were fabricated and their transistor properties were measured. The output drain-source currents (I DS ) of TBCFET were 1 to 2 orders of magnitude higher than those of ordinary planar type FETs with 100μm channel length. On the other hand, because of the TBC structure, off current tends to become larger in the TBCFET. Therefore, in order to solve this off-current problem, we intentionally formed the Schottky junction at the top electrode/semiconductor interface. As a result, the off current became about 2 orders of magnitude smaller than before the formation of the Schottky junction.