CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.
CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.
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DOI：
10.1016/j.jbiotec.2012.08.004
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发表时间：
2013-02
影响因子：
4.1
通讯作者：
S. Linkohr;Wilfried Pletschen;S. U. Schwarz;J. Anzt;V. Cimalla;Oliver Ambacher
中科院分区：
文献类型：
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作者：
S. Linkohr;Wilfried Pletschen;S. U. Schwarz;J. Anzt;V. Cimalla;Oliver Ambacher
研究了AlGaN/GaN异质结构pH敏感离子敏感场效应晶体管的CIP稳定性。对于具有高结构质量的外延AlGaN/GaN薄膜，CIP测试没有使传感器表面退化，并且实现了55- 58 mV/pH的pH灵敏度。几种不同的钝化方案的基础上的SiOx，氮化硅，氮化铝，和纳米晶金刚石进行了比较，特别注意到标准的微电子器件技术的兼容性以及钝化膜的生物相容性。评价了CIP稳定性，主要关注形态稳定性。所有的堆栈包含SiO2或AlN层被蚀刻的NaOH溶液中的CIP过程。通过ICP-CVD生长和溅射的SiNx以及金刚石增强钝化层的堆叠提供了可靠的耐NaOH溶液的钝化。通过优化传感器结构，实现了约0.001pH/h的漂移水平和几个CIP循环的稳定灵敏度。
The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55–58mV/pH were achieved. Several different passivation schemes based on SiOx, SiNx, AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO2or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiNxas well as diamond reinforced passivations. Drift levels about 0.001pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures.