Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy
Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy
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DOI：
10.35848/1882-0786/abae0a
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发表时间：
2020-08
影响因子：
2.3
通讯作者：
Kuan-ting Lin;H. Nema;Q. Weng;Sunmi Kim;K. Sugawara;T. Otsuji;S. Komiyama;Y. Kajihara
中科院分区：
文献类型：
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作者：
Kuan-ting Lin;H. Nema;Q. Weng;Sunmi Kim;K. Sugawara;T. Otsuji;S. Komiyama;Y. Kajihara
利用散射型扫描近场光学显微镜（s-SNOM）研究了偏压双层石墨烯（BLG）中的纳米级红外热成像。S-SNOM提供了一种非接触式技术来检测焦耳加热的BLG表面上产生的热激发电磁倏逝场（1.21 THz）。随着偏置电流的增加，强近场信号主要出现在亚微米尺寸的收缩区域。石墨烯薄膜的温度映射可以从红外近场信号中导出，并且与有限元模拟显示出良好的一致性。因此，我们证明了s-SNOM是一种潜在的石墨烯器件的红外纳米热成像。
This paper demonstrates nanoscale infrared thermal imaging in electrically biased bilayer graphene (BLG) by using a scattering-type scanning near-field optical microscope (s-SNOM). s-SNOM provides a noncontact technique to detect the thermally excited electromagnetic evanescent fields (∼21 THz) generated on the surface of a Joule-heated BLG. With increasing bias current, a strong near-field signal appears mainly in the sub-micrometer-sized constricted region. The temperature mapping of the graphene film can be derived from the infrared near-field signals, and shows good agreement with the finite-element simulation. Hence, we prove that s-SNOM is a potential infrared nano-thermography for the graphene device.