Review: Semiconductor Piezoresistance for Microsystems.
Review: Semiconductor Piezoresistance for Microsystems.
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DOI：
10.1109/jproc.2009.2013612
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Pruitt BL
中科院分区：
文献类型：
--
作者：
Barlian AA;Park WT;Mallon JR Jr;Rastegar AJ;Pruitt BL
压阻式传感器是最早的微机械硅器件之一。对更小、更便宜、性能更高的传感器的需求推动了早期微加工技术的发展，这是微系统或微机电系统（MEMS）的前身。应力对掺杂硅和锗的影响早在1954年史密斯在贝尔实验室的工作中就已为人所知。从那时起，研究人员广泛报道了微尺度，压阻应变计，压力传感器，加速度计和悬臂力/位移传感器，包括许多商业上成功的设备。本文综述了压电阻的发展历史、物理特性和相关的制造技术。我们还讨论了压敏电阻中的电噪声，器件示例和设计考虑，以及替代材料。本文提供了集成压阻技术的全面概述，介绍了压阻物理，工艺和材料的选择以及对研究人员和设备工程师有用的设计指导。
Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.