Imaging with SiPMs in noble-gas detectors
Imaging with SiPMs in noble-gas detectors
复制标题
在惰性气体探测器中使用 SiPM 进行成像
DOI：
10.1088/1748-0221/8/01/c01003
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发表时间：
2012
影响因子：
1.3
通讯作者：
A. Soriano
中科院分区：
文献类型：
--
作者：
N. Yahlali;L. Fernandes;K. Gonz'alez;A. N. C. Garcia;A. Soriano
硅光电倍增管（SiPMs）是广泛用于各种高能和核物理实验中成像的光电传感器。在用于双β衰变和暗物质实验的稀有气体探测器中，SiPM是用于成像的有吸引力的光电传感器。然而，它们对稀有气体（氙和氩）发射的VUV闪烁不敏感。在NEXT实验中，通过用四苯基丁二烯（TPB）涂覆SiPM以将VUV光转换为可见光来克服这个困难。城规会要求严格的储存和操作条件，以防止其被环境因子降解。因此，紫外敏感SiPM的发展是最感兴趣的实验，使用电致发光的稀有气体检测器。特别是对于NEXT所瞄准的具有氙气的稳健且无背景的ββ0ν实验而言，这是一个重要问题。由Hamamatsu提供的UV增强SiPM的光子检测效率（PDE）针对250-500 nm范围内的光进行测定。还测定了相同型号（S10362-33- 50 C）的标准SiPM（涂有和未涂有TPB）的PDE以进行比较。在250-350 nm的UV范围内，标准SiPM的PDE显示出强烈降低，降至约3%。无窗口的UV增强SiPM在325 nm处具有44%的最大PDE，在250 nm处具有30%的最大PDE。具有硅树脂窗口的UV增强SiPM的PDE在UV范围内具有类似的趋势，尽管其低约30%。在250-315 nm范围内，TPB涂层的SiPM的PDE比未涂层的SiPM高约6倍。然而，这低于相同波长范围内的UV增强原型的性能。讨论了紫外增强SiPM在稀有气体探测器中的成像。
Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250–500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250–350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250–315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.