Surface and grain boundary contributions in the electrical resistivity of metallic nanofilms
Surface and grain boundary contributions in the electrical resistivity of metallic nanofilms
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DOI：
10.1016/j.tsf.2006.07.024
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发表时间：
2006-12-05
期刊：
影响因子：
2.1
通讯作者：
Oliva, A. I.
中科院分区：
文献类型：
--
作者：
Camacho, Juan M.;Oliva, A. I.
用热蒸发法在玻璃基片上沉积了厚度为3 ~ 100 nm的Au、Al和Cu薄膜，测定了表面和晶界对薄膜电阻率ρ的贡献。根据Fuchs-Sondheimer、Mayadas-Shatzkes和组合模型测量rho值并进行理论评价。实现了一种从原子力显微镜图像测量晶粒尺寸及其分布的方法，在所有情况下都发现了对数正态行为。结果表明，薄膜的表面反射系数p和晶界反射系数R均随薄膜厚度的增加而减小，表现出比p系数更大的R系数变化。我们的结论是，高的ρ值主要是由于晶界的贡献。(c)2006 Elsevier B. V.保留所有权利。
The surface and grain boundary contributions in the electrical resistivity rho of Au, Al and Cu films deposited by thermal evaporation with thickness from 3 to 100 nm on glass substrates were determined. The rho values were measured and theoretically evaluated following the Fuchs-Sondheimer, the Mayadas-Shatzkes, and the combined models. A method to measure the grain size and its distribution from atomic force microscopy images was implemented, finding a lognormal behavior in all cases. We obtained that surface (p) and grain boundary reflection (R) coefficients decrease as the film thickness increases, showing R coefficient, higher values and most important changes than p coefficient. We concluded that high rho values are mainly due to grain boundaries' contributions. (c) 2006 Elsevier B.V. All rights reserved.