Anisotropy and strain effects on lattice dynamicsin nitride-based superlattices
Anisotropy and strain effects on lattice dynamicsin nitride-based superlattices
复制标题
氮化物基超晶格中晶格动力学的各向异性和应变效应
DOI：
10.1002/pssa.200306160
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Renucci
中科院分区：
文献类型：
--
作者：
J. Gleize;J. Frandon;M. Renucci
The lattice dynamics of quantum wells and superlattices made up of group III-nitride semiconductors [GaN/AlN, GaN/(Al,Ga)N] with wurtzite structure is discussed with emphasis on polar phonons accessible to Raman spectroscopy. A macroscopic model is developed to describe the static equilibrium of GaN/AlN superlattices in free-standing state and to analyze the influence of spontaneous and piezoelectric polarizations on the strain in the constituent layers. The main electrostatic effect concerns the strain component along the growth axis, which can be significantly reduced, particularly in the AlN layers. A phenomenological approach to superlattice polar phonons based on a dielectric continuum model is used to calculate the angular dispersion of quasi-confined modes in a strained GaN/AlN superlattice. It fairly reproduces the experimental results obtained by Raman spectroscopy.
