Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime
Far-infrared photoresponse of the magnetoresistance of the two-dimensional electron systems in the integer quantized Hall regime
复制标题
整数量子化霍尔体系中二维电子系统磁阻的远红外光响应
DOI：
10.1103/physrevb.63.085320
复制
发表时间：
2001
影响因子：
3.7
通讯作者：
S. Komiyama
中科院分区：
文献类型：
--
作者：
K. Hirakawa;K. Yamanaka;Y. Kawaguchi;M. Endo;M. Saeki;S. Komiyama
研究了整数量子化霍尔区Al x Ga 1− x As/GaAs异质结中二维电子系统的远红外（FIR）光致电阻变化.仅在量子霍尔态附近观察到灵敏的光致电阻变化Δ Rxx。发现Δ Rxx的大小和极性强烈依赖于朗道能级填充因子和偏置电流。我们已经表明，不仅是测热效应（即电子加热），而且由于边缘通道输运的电子过程是负责观察到的行为的Δ R xx。所观察到的光响应可用于实现非常灵敏的窄带FIR探测器。
We have investigated the far-infrared (FIR) photoinduced resistance change of the two-dimensional electron systems in Al x Ga 1− x As/GaAs heterojunctions in the integer quantized Hall regime. Sensitive photoinduced resistance change Δ R xx is observed only in the vicinity of the quantum Hall states. It is found that the magnitude and polarity of Δ R xx strongly depend on the Landau-level filling factor and the bias current. We have shown that not only a bolometric effect (ie, electron heating) but also an electronic process due to edge channel transport is responsible for the observed behavior of Δ R xx. The observed photoresponse can be used for realizing very sensitive, narrow-band FIR detectors.