A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation
A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation
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DOI：
10.1109/16.57157
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发表时间：
1990-09
影响因子：
3.1
通讯作者：
E. Sano
中科院分区：
文献类型：
--
作者：
E. Sano
本文在二维上对泊松方程、电流连续性方程和带电阱的速率方程进行了数值求解，以解释砷化镓金属-半导体-金属光导体（MSM pd）中光生载流子和电场的行为。在此基础上提出了一个解析模型，并在一个类似spice的电路模拟器中实现。模拟的MSM PD和由MSM PD和MESFET跨阻放大器组成的单片光电接收机的瞬态响应与测量结果吻合良好。>
Poisson's equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photogenerated carriers and electric fields in GaAs metal-semiconductor-metal photoconductors (MSM PDs). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results. >