Growth of Ferromagnetic Semiconducting Si:Mn Film by Vacuum Evaporation Method
Growth of Ferromagnetic Semiconducting Si:Mn Film by Vacuum Evaporation Method
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DOI：
10.1021/cm034534l
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发表时间：
2003-09
影响因子：
8.6
通讯作者：
H. Kim;N. Kim;Chang-Soo Park;S. Yuldashev;T. Kang;K. Chung
中科院分区：
文献类型：
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作者：
H. Kim;N. Kim;Chang-Soo Park;S. Yuldashev;T. Kang;K. Chung
在973 K退火的Si_（0.93）Mn_（0.07）薄膜中，在扣除Si衬底的抗磁贡献后，得到了5、100和200 K的磁化曲线。矫顽场随温度的升高而单调减小。对于我们的样品，矫顽场，Hc，分别为320，150和70 Oe在5，100和200 K。测量磁化强度高达3 kOe，没有证据表明磁化强度增加超过3 kOe中获得的值。在这项研究中，饱和磁化强度，Ms，分别为2.43，1.78，和0.67 emu/g在5，100，和200 K，分别。Hc和Ms随测量温度的升高而降低。
Three magnetization curves of Si0.93Mn0.07 film annealed at 973 K were taken at 5, 100, and 200 K after substraction of the diamagnetic contribution of the Si substrate. The coercive field decreases monotonically with increasing temperature. For our samples, the coercive fields, Hc, are 320, 150, and 70 Oe at 5, 100, and 200 K, respectively. Magnetization was measured up to 3 kOe without evidence of an increase of magnetization beyond the value acquired in 3 kOe. In this study, the saturation magnetizations, Ms, are 2.43, 1.78, and 0.67 emu/g at 5, 100, and 200 K, respectively. Hc and Ms were decreased with increasing measurement temperature.