Molecular beam epitaxy of GaN 1- x Bi x alloys with high bismuth content
Molecular beam epitaxy of GaN 1- x Bi x alloys with high bismuth content
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高铋含量GaN 1- x Bi x 合金的分子束外延
DOI：
10.1002/pssa.201100312
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Novikov S
中科院分区：
文献类型：
--
作者：
Novikov S
我们利用等离子体辅助分子束外延（PA - MBE）技术，在富Ga和富N生长条件下，在低于~ 100°C的极低生长温度下分析了铋掺入GaN层。富Ga条件下的生长促进了非晶态GaN1−xbix合金的形成。非晶基体具有类似于随机结晶的GaN1−xbix合金的短范围有序。我们已经观察到嵌入在非晶态GaN1−xbix合金中的小晶团的形成。尽管薄膜是伪非晶的，但我们观察到一个清晰的光学吸收边缘，它迅速转移到非常低的能量~ 1 eV。
We have analysed bismuth incorporation into GaN layers using plasma‐assisted molecular beam epitaxy (PA‐MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga‐rich and N‐rich growth conditions. The formation of amorphous GaN1−xBixalloys is promoted by growth under Ga‐rich conditions. The amorphous matrix has a short‐range order resembling random crystalline GaN1−xBixalloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBixalloys. Despite the fact that the films are pseudo‐amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV.