Revealing SRAM memory content using spontaneous photon emission
Revealing SRAM memory content using spontaneous photon emission
复制标题
使用自发光子发射揭示 SRAM 存储器内容
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
J. Sylvestri
中科院分区：
文献类型：
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作者：
F. Stellari;P. Song;Manuel Villalobos;J. Sylvestri
本文提出了一种新的方法，允许人们通过观察从芯片背面收集的自发光子发射来揭示SRAM存储器的内容。该方法基于我们建议的基于测试仪的光学方法[1]，该方法结合了不同的测试模式、时间积分和时间分辨发射测量，以非侵入性的方式定位栅极、检测逻辑状态和识别芯片内部的功能块活动。文中用14 nm SOI工艺节点制作的Mb静态随机存储器测试芯片验证了该技术的性能。这项技术在芯片调试、逆向工程、硬件和软件安全应用中都有很好的应用。
This paper presents a novel methodology that allows one to reveal SRAM memory content by observing the spontaneous photon emission collected from the backside of the chip. This method is based on our proposed tester-based optical methodology [1] that combines different test patterns, time-integrated and time-resolved emission measurements to localize gates, detect logic states, and identify functional block activity inside a chip in a non-invasive fashion. In this paper, the capability of the technique is demonstrated using a 64 Mb SRAM test chip fabricated in 14 nm SOI technology node. This technique has useful applications for chip debugging, reverse engineering, hardware and software security applications.