Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition.
Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition.
复制标题
通过金属有机化学气相沉积在硅 (100) 上无催化剂生长 InP 纳米线的阶段
DOI：
10.1186/1556-276x-7-321
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发表时间：
2012-06-20
影响因子：
--
通讯作者：
Zhang D
中科院分区：
文献类型：
--
作者：
Miao G;Zhang D
采用低压金属有机化学气相沉积法在Si（100）衬底上生长了无催化剂的InP纳米线。研究了纳米线生长的不同阶段。扫描电子显微镜图像显示，随着生长的继续，纳米线的密度增加。在纳米线生长过程中仍然可以形成催化铟液滴。X射线衍射分析表明，不同生长阶段的纳米线均为单晶，具有<111 >生长方向。在室温下对InP纳米线进行的光致发光研究表明，随着生长时间的增加，其光致发光的蓝移逐渐减小，这与纳米线直径的增加有关，而与长度无关。不同生长阶段的纳米线的拉曼光谱表明纳米线的质量发生了变化。InP纳米线在不同生长阶段的生长被证明是一个动态过程。
Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with <111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.