Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face
Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face
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DOI：
10.1063/1.5042038
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发表时间：
2018-10
影响因子：
4
通讯作者：
H. Hirai;K. Kita
中科院分区：
文献类型：
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作者：
H. Hirai;K. Kita
为了提高4 H-SiC金属氧化物半导体场效应晶体管的性能，系统地研究了干氧化后在潮湿环境中的氧化后退火（POA）工艺。通过调整湿POA条件，我们澄清，在低温下的湿POA是更有利于提高沟道迁移率和抑制平带电压不稳定性。沟道迁移率提高的机制之一是由于MOS界面附近氧化层中陷阱密度的降低，而不是传统的界面陷阱。为了提高4 H-SiC金属氧化物半导体场效应晶体管的性能，系统研究了干氧化后的湿环境下氧化后退火（POA）工艺。通过调整湿POA条件，我们澄清，在低温下的湿POA是更有利于提高沟道迁移率和抑制平带电压不稳定性。沟道迁移率提高的机制之一是由于MOS界面附近氧化层中陷阱密度的降低，而不是传统的界面陷阱。基于4 H-SiC上氧化物生长动力学，讨论了湿环境对界面性能的影响。
For improvement of 4H-SiC metal-oxide-semiconductor field-effect-transistor performance, a post-oxidation annealing (POA) process in a wet environment after dry oxidation was systematically investigated. By tuning the wet-POA conditions, we clarified that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of flatband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.For improvement of 4H-SiC metal-oxide-semiconductor field-effect-transistor performance, a post-oxidation annealing (POA) process in a wet environment after dry oxidation was systematically investigated. By tuning the wet-POA conditions, we clarified that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of flatband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.