Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition
Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition
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通过金属有机化学气相沉积在 (001) GaAs 上生长 (001) CdTe 的透射电子显微镜
DOI：
10.1063/1.97842
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发表时间：
1987
影响因子：
4
通讯作者：
I. Bhat
中科院分区：
文献类型：
--
作者：
J. Petruzzello;D. Olego;S. Ghandhi;N. Taskar;I. Bhat
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The nature of dislocations in (001) CdTe‐(001) GaAs heterostructures was investigated by transmission electron microscopy. The samples were grown by metalorganic chemical vapor deposition with CdTe layer thicknesses h ranging from 0.1 to 2.2 μm. The interface contains an array of misfit dislocations spaced about 31 A apart, independent of h. These dislocations do not relax all of the lattice mismatch (14.6%) in the CdTe layers with h<1 μm. Above the interfaces, surface nucleated dislocations are observed in the CdTe layers and their density depends on h. No evidence of an oxide or foreign interface layer was found in these samples.