Contact shaping in planar Gunn diodes
Contact shaping in planar Gunn diodes
复制标题
平面耿氏二极管中的接触成形
DOI：
10.1002/pssc.201000539
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Pilgrim N
中科院分区：
文献类型：
--
作者：
Pilgrim N
具有平面结构的古恩二极管的生产提供了通过光刻处理容易地指定接触分离以及因此指定器件过渡区长度的能力。除了制造和集成方面的优势外，这还可以生产出触点在宽度上有意且可控地不均匀的器件。通过接触的这种成形，也可以控制古恩畴的形态。这已经证明了在操作频率和振荡幅度方面分别将器件性能提高至少30%和100%的潜力。（© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The production of Gunn diodes with a planar architecture provides the ability to easily specify contact separation, and hence device transit region length, through lithographic processing. Beyond manufacturing and integration benefits, this also enables the production of devices whose contacts are intentionally and controllably non‐uniform over their width. Through such shaping of the contacts, the morphology of the Gunn domains may also be controlled. This has demonstrated potential for improving device performance, both with regard to operating frequency and oscillation amplitude, by at least ∼30% and ∼100% respectively. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)