Investigation of the ageing performance of AlN-ceramic used in high-power-semiconductors
Investigation of the ageing performance of AlN-ceramic used in high-power-semiconductors
复制标题
高功率半导体用氮化铝陶瓷的老化性能研究
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
D. Peier
中科院分区：
文献类型：
--
作者：
T. Ruemenapp;D. Peier
大功率半导体器件的最大工作电压不仅受到硅中工艺或热问题的限制，而且还受到封装中最大电场和击穿强度分布的限制。选择氮化铝陶瓷（AlN）作为该应用的绝缘材料是基于其高导热性（/spl λ//sub AlN//spl ap/170 W/（m.K））。考虑到将例如IGBT（绝缘栅双极晶体管）的工作电压从6.5kV提高到10 kV以上的电压水平的目的，AlN的电特性变得更加重要。因此，在这项研究中，未金属化的工业生产的AlN基板材料，DCB（直接铜键合）铜金属化和AMB（主动金属钎焊）铜金属化AlN基板的介电击穿和老化性能进行了检查。研究表明，陶瓷的交流和直流击穿强度之间存在巨大的差异，这可以归因于陶瓷的微观结构。无法确定电老化期间材料的降解。DCB金属化AlN基板表现出类似的行为，但击穿电压较低，因为不均匀的场分布所造成的几何形状的金属化。与此相反，AMB金属化AlN衬底的击穿行为截然不同。在大多数情况下，尽管样品几何形状与DCB样品相同，但仍会发生外部闪络。这种行为的原因也可以归因于AlN的微观结构。AlN陶瓷的研究阐明了向更高的工作电压的发展潜力。
The maximum voltage of a high power semiconductor is not only limited by the processes in the silicon or thermal problems, but also by the maximum electric field and breakdown strength distribution in the packaging. The selection of aluminium nitride ceramics (AlN) as insulation material for this application is based on its high thermal conductivity (/spl lambda//sub AlN//spl ap/170 W/(m.K)). Taking into account the aim of increasing the operating voltage of for example IGBTs (Insulated Gate Bipolar Transistor) from 6.5 kV up to voltage levels above 10 kV the electric characteristics of AlN become much more important. Therefore the dielectric breakdown and the ageing performance of unmetallized industrially produced AlN substrate material, DCB (Direct Copper Bonding) copper metallized and AMB (Active Metal Brazing) copper metallized AlN substrates are examined in this study. The investigation shows a huge difference between the ac and dc breakdown strength which can attributed to the microstructure of the ceramic. A degradation of the material during the electric ageing cannot be determined. The DCB metallized AlN substrates show a similar behaviour but the breakdown voltage is lower because of the inhomogeneous field distribution caused by the geometry of the metallization. In contrast to this the breakdown behaviour of the AMB metallized AlN substrate is quite different. In most cases external flashovers occur although the sample geometry is equal to the DCB samples. The reason for this behaviour can also be attributed to the microstructure of AlN. The investigation of AlN-ceramic elucidates a development potential towards higher operating voltages.