Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem
Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem
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硼氧复合物导致硅光伏电池光致降解：对该问题的新见解
DOI：
10.1002/pssa.201900315
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
A. Peaker
中科院分区：
文献类型：
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作者：
V. Markevich;M. Vaqueiro;J. T. D. de Guzman;J. Coutinho;P. Santos;I. Crowe;M. Halsall;I. Hawkins;S. Lastovskii;L. I. Murin;A. Peaker
简要回顾了文献中关于含硼和氧原子的硅材料中的少数载流子捕获和光致退化（LID）效应的结果。特别注意与“深”电子陷阱有关的现象（J.A. Hornbeck和J.R. Haynes，Phys.Rev.1955，97，311）以及最近报道的将LID与由取代的硼原子和氧二聚体（BsO 2）组成的缺陷从具有深施主态的构型转变为与浅受主态相关的复合活性构型（M. Vaquilla-Contreras等人，2019，125，185704）。结果表明，BsO 2复合物是一种具有负-U性质的缺陷，它是未退化Si：B+O样品和太阳能电池中少数载流子俘获和持久光电导的原因。有人认为，Hornbeck和Haynes观察到的“深”电子陷阱是“缓慢”形成浅受主缺陷的前体，浅受主缺陷是掺硼直拉硅（Cz-Si）晶体中主要LID的原因。深缺陷和浅缺陷都是BsO 2复合物，电荷态和原子构型之间的转换解释了所观察到的电子捕获和LID现象。
Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with “deep” electron traps (J. A. Hornbeck and J. R. Haynes, Phys. Rev. 1955, 97, 311) and the recently reported results that have linked LID with the transformation of a defect consisting of a substitutional boron atom and an oxygen dimer (BsO2) from a configuration with a deep donor state into a recombination active configuration associated with a shallow acceptor state (M. Vaqueiro‐Contreras et al., J. Appl. Phys. 2019, 125, 185704). It is shown that the BsO2 complex is a defect with negative‐U properties, and it is responsible for minority carrier trapping and persistent photoconductivity in nondegraded Si:B+O samples and solar cells. It is argued that the “deep” electron traps observed by Hornbeck and Haynes are the precursors of the “slow” forming shallow acceptor defects, which are responsible for the dominant LID in boron‐doped Czochralski silicon (Cz‐Si) crystals. Both the deep and shallow defects are BsO2 complexes, transformations between charge states and atomic configurations of which account for the observed electron trapping and LID phenomena.