The Enhanced H2 Selectivity of SnO2 Gas Sensors with the Deposited SiO2 Filters on Surface of the Sensors
The Enhanced H2 Selectivity of SnO2 Gas Sensors with the Deposited SiO2 Filters on Surface of the Sensors
复制标题
DOI：
10.3390/s19112478
复制
发表时间：
2019-06-01
期刊：
影响因子：
3.9
通讯作者：
He, Ze
中科院分区：
文献类型：
--
作者：
Meng, Xin;Zhang, Qinyi;He, Ze
本文报道了以二甲基二乙氧基硅烷为硅源，采用化学气相沉积法在SnO_2气敏元件表面沉积SiO_2，以提高其对H_2的选择性。在150摄氏度到400摄氏度的工作温度下，测试了气体传感器对乙醇、丙酮、苯和氢气的传感性能。我们的实验结果表明，更高的选择性和响应氢气的传感器的表面上的二氧化硅的沉积实现。在500 ℃下沉积SiO2 8 h的传感器在350 ℃下对1000 ppm氢的响应最高（R-a/R-g = 144），在600 ℃下沉积SiO2 4 h的传感器在200 ℃下对1000 ppm氢的响应变化系数最大（D = 69.4）。本文还讨论了SiO_2对氢敏感元件灵敏度提高和对氢有更高响应的机理。
This paper reports a study on the enhanced H-2 selectivity of SnO2 gas sensors with SiO2 on the surface of the sensors obtained via chemical vapor deposition using dirthoxydimethylsilane as the Si source. The gas sensors were tested for sensing performance towards ethanol, acetone, benzene, and hydrogen at operating temperatures from 150 degrees C to 400 degrees C. Our experimental results show that higher selectivity and responses to hydrogen were achieved by the deposition of SiO2 on the surface of the sensors. The sensor with SiO2 deposited on its surface at 500 degrees C for 8 h exhibited the highest response (R-a/R-g = 144) to 1000 ppm hydrogen at 350 degrees C, and the sensor with SiO2 deposited on its surface at 600 degrees C for 4 h attained the maximum response variation coefficient (D = 69.4) to 1000 ppm hydrogen at 200 degrees C. The mechanism underlying the improvement in sensitivity and the higher responses to hydrogen in the sensors with SiO2 on their surface is also discussed.