BORON-RELATED DEEP CENTERS IN 6H-SIC
BORON-RELATED DEEP CENTERS IN 6H-SIC
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DOI：
10.1007/bf00324007
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发表时间：
1990-09-01
影响因子：
2.7
通讯作者：
LANIG, P
中科院分区：
文献类型：
--
作者：
SUTTROP, W;PENSL, G;LANIG, P
6 H-碳化硅层通过液相外延（LPE）工艺生长。通过离子注入或在LPE工艺期间从B掺杂的硅熔体用硼掺杂这些层。深能级瞬态谱（DLTS），导纳谱和光致发光（PL）被用来研究深杂质中心。发现了两个电活性缺陷中心：孤立的硼受主中心（EB =Ev+0.3eV）和与硼有关的D中心（ED =Ev+0.58eV）。在这些层中观察到的黄色发光提出是由于通过D-中心和氮供体的对复合。讨论了D心的形成和起源。
6H-silicon carbide layers are grown by a liquid phase epitaxy (LPE) process. The layers are doped with boron either by ion implantation or during the LPE process from a B-doped silicon melt. Deep-level transient spectroscopy (DLTS), admittance spectroscopy and photoluminescence (PL) are used to investigate deep impurity centers. Two electrically active defect centers are detected: the isolated boron acceptor atEB=Ev+0.3eV and the boron-related D-center atED=Ev+0.58eV. The yellow luminescence observed in these layers is proposed to be due to pair recombination via D-center and nitrogen donor. Formation and origin of the D-center are discussed.