Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets
Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets
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DOI：
10.1063/1.2388730
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
West, James E.
中科院分区：
文献类型：
--
作者：
Huang, Cheng;Katz, Howard E.;West, James E.
We demonstrate that the electrostatic polarization of an organic semiconductor (OSC) by a gate dielectric with stored charges and electric fields enables the realization of both threshold voltage tuning and inversion process control of OSC thin-film field-effect transistors (OFETs). As a result, OFETs based on typically unipolar n-channel copper hexadecafluorophthalocyanine semiconductor thin films, deposited on a silicon dioxide quasipermanent charged electret as a gate insulator, show unipolar p-channel "inversion" operation in ambient air and form complementary monolithic, single-semiconductor inverter circuits. The field produced by patterned, grid-controlled negative corona charging and subsequent thermal annealing (before semiconductor deposition) electrostatically induces sufficient positive charges to provide significant hole mobility, ca. 0.011 cm(2) V-1 s(-1), in response to moderate additional negative gate voltages. (c) 2006 American Institute of Physics.
