Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction
Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction
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DOI:
10.1088/0953-8984/22/3/035301
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发表时间:
2010-01
期刊:
影响因子:
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通讯作者:
Jiang-chai Chen;Shu-guang Cheng;S. Shen;Qing Sun
中科院分区:
文献类型:
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作者:
Jiang-chai Chen;Shu-guang Cheng;S. Shen;Qing Sun
Electronic transport in a graphene-based ferromagnetic/normal/ferromagnetic junction is investigated by means of the Landauer–Büttiker formalism and the nonequilibrium Green function technique. For the zigzag edge case, the results show that the conductance is always larger than e2/h for the parallel configuration of lead magnetizations, but for the antiparallel configuration the conductance becomes zero because of the band-selective rule. Therefore, a magnetoresistance (MR) plateau emerges with the value 100% when the Fermi energy is located around the Dirac point. In addition, choosing narrower graphene ribbons can yield wider 100% MR plateaus and the length change of the central graphene region does not affect the 100% MR plateaus. Although the disorder will reduce the MR plateau, the plateau value can still be kept about 50% even in a large disorder strength case. In addition, when the magnetizations of the left and right leads have a relative angle, the conductance changes as a cosine function of the angle. What is more, for the armchair edge case, the MR is usually small. So, it is more favorable to fabricate a graphene-based spin valve device by using a zigzag edge graphene ribbon.