Metal Oxide Thin-Film Transistors from Nanoparticles and Solutions
Metal Oxide Thin-Film Transistors from Nanoparticles and Solutions
复制标题
由纳米粒子和溶液制成的金属氧化物薄膜晶体管
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
R. Schmechel
中科院分区：
文献类型：
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作者：
C. Busch;S. Bubel;R. Theissmann;R. Schmechel
本文比较了几种用于薄膜晶体管应用的半导体氧化物的非真空低温沉积技术。在介绍了薄膜晶体管的基本理论后，简要总结了半导体氧化物领域的发展。更详细地考虑三种不同的沉积技术：（1）从载气流中直接沉积半导体氧化物纳米颗粒，以SnOx和In 2 O 3为例，（2）湿法沉积ZnO纳米分散体，和（3）沉积液体前体，随后转化为半导体氧化物，以ZnO为例。的优点和缺点的几种方法进行了严格的讨论，也相对于从文献中得到的结果。
This article compares several non-vacuum-based low-temperature deposition techniques of semiconducting oxides for thin-film transistor applications. After an introduction into basic thin-film transistor theory it summarizes in short the development in the field of semiconducting oxides. Three different deposition techniques are considered in more detail: (1) a direct deposition of semiconducting oxide nanoparticles from a carrier gas stream, on the example of SnO\(_{x}\) and In\(_{2}\)O\(_{3}\), (2) a wet-deposition of nanodispersions of ZnO, and (3) a deposition of liquid precursors with subsequent transformation into the semiconducting oxide, on the example of ZnO. The advantages and disadvantages of the several methods are discussed critically also with respect to results from the literature.