A novel 0.16 μm — 300 V SOIBCD for ultrasound medical applications
A novel 0.16 μm — 300 V SOIBCD for ultrasound medical applications
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DOI：
10.1109/ispsd.2011.5890784
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
M. Sambi;D. Merlini;P. Galbiati;E. Bonera;F. Belletti
中科院分区：
文献类型：
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作者：
M. Sambi;D. Merlini;P. Galbiati;E. Bonera;F. Belletti
本文描述了集成击穿电压高于300V的元件的0.16μm SOIBCD新工艺的发展。通过TCAD模拟、形态分析和拉曼光谱测量，研究了埋氧层和横向介质隔离引起的工艺集成和机械应力。元件组合源自现有的结隔离(JI)0.16μm技术，并通过高压MOS进行了扩展。完全介质隔离引起的应力远未达到临界值。测试了350V以上的击穿电压。
The development of a new 0.16 μm SOIBCD technology integrating components with breakdown voltage higher than 300 V is here described. Process integration and mechanical stress due to buried oxide and lateral dielectric isolation was investigated with TCAD simulations, morphological analysis and Raman spectroscopy measurements. Component portfolio was derived from existing junction isolated (JI) 0.16 μm technologies and expanded with high voltage MOS. Stress induced by the full dielectric isolation is far from critical values. Breakdown voltages over 350 V were measured.