High-Frequency Lamb Wave Device Composed of LiNbO3 Thin Film
High-Frequency Lamb Wave Device Composed of LiNbO3 Thin Film
复制标题
LiNbO3薄膜构成的高频兰姆波器件
DOI：
10.1143/jjap.48.07gg08
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发表时间：
2008
影响因子：
1.5
通讯作者：
Hikari Tochishita
中科院分区：
文献类型：
--
作者：
M. Kadota;T. Ogami;Kansho Yamamoto;Y. Negoro;Hikari Tochishita
已经认为，例如对于日本的第四代移动电话系统，使用传统的声表面波(SAW)衬底很难实现3 GHz或更高的高频器件。在本研究中，我们尝试利用化学气相沉积法(CVD)沉积一层薄薄的LiNbO_3薄膜，利用兰姆波制作高频谐振器。在此基础上，制作了由电极/薄外延LiNbO_3薄膜/气隙/衬底组成的单端口兰姆波谐振器。所测谐振器的谐振频率为4.5 GHz，相当于14000m/S的极高速度、52dB的大阻抗比和7.2%的较宽带宽。
It has been considered that it is difficult to realize a high-frequency device of 3 GHz or more, for instance, for a fourth generation mobile phone system in Japan, using a conventional surface acoustic wave (SAW) substrate. In this study, we attempted to fabricate a high-frequency resonator using Lamb waves, which has a high velocity and consists of a thin LiNbO3 film deposited by chemical vapor deposition (CVD). As a result, a 1-port Lamb wave resonator composed of an electrode/thin epitaxial LiNbO3 film/air-gap/base substrate was fabricated. The measured resonator has a high resonant frequency of 4.5 GHz, which corresponds to a very high velocity of 14,000 m/s, a large impedance ratio of 52 dB, and a relatively wide bandwidth of 7.2%.