FERROMAGNETIC DELTA-MN1-XGAX THIN-FILMS WITH PERPENDICULAR ANISOTROPY
FERROMAGNETIC DELTA-MN1-XGAX THIN-FILMS WITH PERPENDICULAR ANISOTROPY
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DOI：
10.1063/1.108245
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发表时间：
1992-11-09
影响因子：
4
通讯作者：
KRISHNAN, KM
中科院分区：
文献类型：
--
作者：
KRISHNAN, KM
本文报道了在砷化镓衬底上生长的热力学稳定的三角相Mn1-xGaX单晶薄膜的结构和性质。X-射线Theta-2THETA扫描和掠入射散射测量证实，该相的晶胞为四方晶胞(a=0.279 nm，c=0.351 nm)，并沿垂直于衬底表面的c轴方向生长。X-射线发射光谱证实其组成为62+/-2%的Mn。在沿薄膜法线施加磁场的情况下，极克尔旋转、SQUID和振动样品磁强计测量结果显示，近乎完美的正方形磁滞回线证实了薄膜的垂直各向异性。薄膜在820 nm处的克尔旋转角约为0.1度，矫顽力为6.27kOe，饱和磁化强度为460emu/cm3。在很宽的波长范围内，薄膜的光学反射率为65%-70%。这组独特的性质使其成为一种非常有希望的磁光记录材料，具有通过适当的图案化技术集成半导体/磁性器件的额外潜力。
We report the structure and properties of the thermodynamically stable delta-phase Mn1-xGax single crystal thin films grown on GaAs. X-ray THETA-2THETA scans and grazing-incidence scattering measurements confirmed that the unit cell of this phase is tetragonal (a = 0.279 nm, c = 0.351 nm) and grows with the c-axis oriented normal to the {001} GaAs substrate surface. X-ray emission spectroscopy confirmed the composition to be 62 +/- 2% Mn. Polar Kerr rotation, SQUID and vibrating sample magnetometer measurements with the field applied along the thin-film normal showed nearly perfect square hysteresis loops confirming perpendicular anisotropy of the films. The film exhibits a Kerr rotation angle of approximately 0.1-degrees at 820 nm, a coercivity of 6.27 kOe and a saturation magnetization of 460 emu/cm3. The optical reflectivity of the film was 65%-70% over a broad range of wavelengths. This unique set of properties make it a very promising material for magneto-optic recording with the additional potential of integrating semiconductor/magnetic devices by suitable patterning techniques.