Formation of nanoporous noble metal thin films by electrochemical dealloying of PtxSi1−x
Formation of nanoporous noble metal thin films by electrochemical dealloying of PtxSi1−x
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DOI：
10.1063/1.2161939
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发表时间：
2006-01
影响因子：
4
通讯作者：
J. Thorp;K. Sieradzki;Lei Tang;P. Crozier;A. Misra;M. Nastasi;D. Mitlin;S. T. Picraux
中科院分区：
文献类型：
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作者：
J. Thorp;K. Sieradzki;Lei Tang;P. Crozier;A. Misra;M. Nastasi;D. Mitlin;S. T. Picraux
我们证明了纳米多孔铂薄膜的合成硅电化学去合金。非晶PtxSi 1 −x薄膜（厚度约100- 250 nm）通过电子束共沉积形成，并在HF水溶液中在足以选择性去除Si的电化学电势下脱合金，同时允许Pt自组装成纳米多孔结构。Pt纳米多孔层的孔径为5- 20 nm，韧带厚度为0.5nm，表面积增加>20倍，具有超细晶多晶显微结构。
We demonstrate the synthesis of nanoporous Pt thin films on Si by electrochemical dealloying. Amorphous PtxSi1−x films (∼100–250nm thick) are formed by electron beam codeposition and dealloyed in aqueous HF solutions at an electrochemical potential sufficient to selectively remove Si while allowing self-assembly of Pt into a nanoporous structure. The Pt nanoporous layers have a pore size of 5–20nm, ligament thickness ∼5nm, a surface area enhancements >20 times, and an ultrafine grain polycrystalline microstructure.