Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${ m HfO}_{2}$ Gate Oxide
Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${
m HfO}_{2}$ Gate Oxide
复制标题
金属栅极和后端材料对 ${ m HfO}_{2}$ 栅极氧化物中 X 射线剂量的影响
DOI：
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发表时间：
2011
影响因子：
1.8
通讯作者：
M. Mendenhall
中科院分区：
文献类型：
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作者：
A. Dasgupta;D. Fleetwood;Robert A. Reed;Robert A. Weller;M. Mendenhall
用蒙特卡罗模拟软件MRED研究了10keV和400keV终点能量的韧致辐射X射线对HfO2栅电介质和TiN和TaN金属栅MOS电容器的影响。我们计算了10keV X射线照射夹在金属栅和硅衬底之间的HfO2栅电介质引起的剂量减少。我们量化了后端金属化层的影响，包括铜互连、W通孔、硼磷硅玻璃(BPSG)和SiO_2钝化层对低能和中能X射线的影响。对于受到10keV x射线照射的厚金属化堆栈，根据材料类型和覆盖层厚度的不同，可能会发生剂量增强或衰减。对于用400keV终点能量的韧致辐射x射线照射的类似堆栈，观察到显著的剂量增强。
The effects of 10-keV and 400-keV endpoint-energy bremsstrahlung x-rays have been studied using the Monte Carlo simulator, MRED, for MOS capacitors with HfO2 gate dielectrics and TiN and TaN metal gates. We compute the reduction in dose that occurs for 10-keV x-ray irradiation of thin HfO2 gate dielectrics sandwiched between the metal gate and the Si substrate. We quantify the effects of back-end-of-line metallization layers, including copper interconnects, W vias, and borophosphosilicate glass (BPSG) and SiO2 passivation layers for low and medium energy x-rays. For thick metallization stacks irradiated by 10-keV x-rays, dose enhancement or attenuation can occur, depending on material type and overlayer thicknesses. For similar stacks irradiated with 400-keV endpoint-energy bremsstrahlung x-rays, significant dose enhancement is observed.