Local boron environment in B-doped nanocrystalline diamond films.
Local boron environment in B-doped nanocrystalline diamond films.
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DOI:
10.1039/c2nr31530k
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发表时间:
2012-09
期刊:
影响因子:
6.7
通讯作者:
S. Turner;Ying‐gang Lu;S. Janssens;F. Da Pieve;D. Lamoen;J. Verbeeck;K. Haenen;P. Wagner;G. van Tendeloo
中科院分区:
文献类型:
--
作者:
S. Turner;Ying‐gang Lu;S. Janssens;F. Da Pieve;D. Lamoen;J. Verbeeck;K. Haenen;P. Wagner;G. van Tendeloo
Thin films of heavily B-doped nanocrystalline diamond (B:NCD) have been investigated by a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy performed on a state-of-the-art aberration corrected instrument to determine the B concentration, distribution and the local B environment. Concentrations of ~1 to 3 at.% of boron are found to be embedded within individual grains. Even though most NCD grains are surrounded by a thin amorphous shell, elemental mapping of the B and C signal shows no preferential embedding of B in these amorphous shells or in grain boundaries between the NCD grains, in contrast with earlier work on more macroscopic superconducting polycrystalline B-doped diamond films. Detailed inspection of the fine structure of the boron K-edge and comparison with density functional theory calculated fine structure energy-loss near-edge structure signatures confirms that the B atoms present in the diamond grains are substitutional atoms embedded tetrahedrally into the diamond lattice.