Porosity superlattices: a new class of Si heterostructures
Porosity superlattices: a new class of Si heterostructures
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多孔超晶格：一类新型硅异质结构
DOI：
10.1088/0022-3727/27/6/035
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
P. Grosse
中科院分区：
文献类型：
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作者：
M. Berger;C. Dieker;M. Thönissen;L. Vescan;H. Lüth;H. Münder;W. Theiß;M. Wernke;P. Grosse
用透射电子显微镜、光致发光和反射光谱研究了多孔超晶格。使用两种不同的技术在p型掺杂Si上形成超晶格。首先，对于均匀掺杂的衬底，我们周期性地改变形成电流密度，从而改变孔隙率。第二，在对周期性掺杂的Si层进行蚀刻的同时保持电流密度恒定。对于第一种类型的超晶格的层厚度由透射电子显微镜测定。计算结果与根据腐蚀速率和腐蚀时间计算的值吻合较好。对于这两种类型的超晶格，由于超晶格的周期性，反射光谱和光致发光光谱显示出强烈的调制。
Porosity superlattices have been investigated by transmission electron microscopy, photoluminescence and reflectance spectroscopy. The superlattices were formed on p-type doped Si using two different techniques. Firstly, for homogeneously doped substrates we have periodically varied the formation current density and thereby the porosity. Secondly, the current density was kept constant while etching was performed on periodically doped Si layers. For the first type of superlattices the layer thicknesses were determined by transmission electron microscopy. The results are in good agreement with the values calculated from the etching rate and time. For both types of superlattices, reflectance and photoluminescence spectra show strong modulation due to the periodicity of the superlattice.