Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition
Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition
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DOI：
10.1021/ja803471g
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发表时间：
2008-08-27
影响因子：
15
通讯作者：
Karppinen, Maarit
中科院分区：
文献类型：
--
作者：
Ras, Robin H. A.;Sahramo, Elina;Karppinen, Maarit
区域选择性原子层沉积（ALD）允许在衬底的某些部分上生长高度均匀的薄无机膜，同时防止在其它部分上的膜生长。虽然选择性ALD生长在微米和亚微米尺度下工作良好，但它在纳米尺度上失败了，特别是在一侧生长而另一侧不生长的界面附近。原因是迄今为止的方法仅依赖于衬底的化学改性，而忽略了纳米级横向ALD生长的发生。在这里，我们提出了一个概念的验证，也在纳米尺度上阻止横向ALD生长相结合的化学表面改性与形貌特征。我们表明，区域选择性ALD的ZnO发生通过应用二乙基锌/水ALD工艺上包含密集阵列的纳米级柱的机翼。无机膜中特征的尺寸降至25 nm，据我们所知，这是通过区域选择性ALD获得的最小尺寸。重要的是，我们的概念允许合成这样的小特征，即使膜厚数倍。
Area-selective atomic layer deposition (ALD) allows the growth of highly uniform thin inorganic films on certain parts of the substrate while preventing the film growth on other parts. Although the selective ALD growth is working well at the micron and submicron scale, it has failed at the nanoscale, especially near the interface where there is growth on one side and no-growth on the other side. The reason is that methods so far solely rely on the chemical modification of the substrate, while neglecting the occurrence of lateral ALD growth at the nanoscale. Here we present a proof-of-concept for blocking the lateral ALD growth also at the nanoscale by combining the chemical surface modification with topographical features. We demonstrate that area-selective ALD of ZnO occurs by applying the diethylzinc/water ALD process on cicada wings that contain a dense array of nanoscopic pillars. The sizes of the features in the inorganic film are down to 25 nm which is, to the best of our knowledge, the smallest obtained by area-selective ALD. Importantly, our concept allows the synthesis of such small features even though the film is multiple times thicker.