Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current
Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current
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DOI：
10.1109/ted.2021.3053518
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发表时间：
2021-03
影响因子：
3.1
通讯作者：
K. Tachiki;T. Ono;Takuma Kobayashi;T. Kimoto
中科院分区：
文献类型：
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作者：
K. Tachiki;T. Ono;Takuma Kobayashi;T. Kimoto
在这篇简报中，SiC MOSFET中的最小沟道长度（短沟道效应（SCE）开始发生时的沟道长度）通过实验确定。我们制作了不同沟道长度和受主浓度的4 H-SiC MOSFET，并分析了它们的电学特性。我们提出了一种方法来确定碳化硅（SiC）MOSFET的最小沟道长度，专注于在饱和区的漏电流的增加率，并定义的最小沟道长度与不同的受主浓度在p-体区制造的SiC MOSFET。SiC MOSFET的最小沟道长度与受主浓度之间的关系与Si MOSFET相似。在SiC MOSFET中获得的最小沟道长度略长于Si MOSFET中的沟道长度，这是由于SiC的内建电势比Si的内建电势大以及存在高密度的界面态，这增强了SCE。这项工作提供了指导方针，利用非常短的沟道结构的SiC MOSFET的设计。
In this brief, the minimum channel length (the channel length at which short-channel effects (SCEs) begin to occur) in SiC MOSFETs was experimentally determined. We fabricated 4H-SiC MOSFETs with various channel lengths and acceptor concentrations and analyzed their electrical characteristics. We propose a method for determining the minimum channel length in silicon carbide (SiC) MOSFETs, focusing on the increased rate of the drain current in the saturation region, and define the minimum channel length for the fabricated SiC MOSFETs with various acceptor concentrations in the p-body region. The relationship between the minimum channel length and the acceptor concentration for these SiC MOSFETs shows a similar tendency to that for Si MOSFETs. The obtained minimum channel lengths in the SiC MOSFETs are slightly longer than those in Si MOSFETs, which is caused by the larger built-in potential of SiC compared to that of Si and the existence of a high density of interface states, which enhance the SCEs. This work provides guidelines for the design of SiC MOSFETs that utilize very short-channel structures.