Highly efficient dye-sensitized solar cell performance from template derived high surface area mesoporous TiO2 nanospheres

Highly efficient dye-sensitized solar cell performance from template derived high surface area mesoporous TiO2 nanospheres
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DOI:
10.1039/c6ra14976f
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发表时间:
2016-07
期刊:
影响因子:
3.9
通讯作者:
J. Archana;S. Harish;M. Sabarinathan;M. Navaneethan;S. Ponnusamy;C. Muthamizhchelvan;M. Shimomura;H. Ikeda;D. Aswal;Y. Hayakawa
J. Archana;S. Harish;M. Sabarinathan;M. Navaneethan;S. Ponnusamy;C. Muthamizhchelvan;M. Shimomura;H. Ikeda;D. Aswal;Y. Hayakawa
中科院分区:
化学3区
文献类型:
--
作者:
J. Archana;S. Harish;M. Sabarinathan;M. Navaneethan;S. Ponnusamy;C. Muthamizhchelvan;M. Shimomura;H. Ikeda;D. Aswal;Y. Hayakawa

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采用溶剂热法,以乙二醇为模板合成了高比表面积的介孔锐钛矿型二氧化钛球。电子显微镜研究表明,形成了表面光滑、尺寸均匀的介孔球。当四异丙醇钛浓度为0.5 mL时,获得了221.52 m² g⁻¹的高比表面积。X射线衍射和拉曼分析表明形成了锐钛矿相二氧化钛。通过优化的喷雾沉积法实现了光阳极介孔膜的均匀沉积。研究了钌染料敏化剂N719和吲哚啉染料敏化剂D205对染料敏化太阳能电池性能的影响。使用敏化剂N719和D205时,在介孔锐钛矿型二氧化钛球涂层的染料敏化太阳能电池中分别实现了8.96%和9.02%的最高效率。光电转换效率(IPCE)分析表明,介孔球有效地收集了入射光子,并通过内部反射和散射过程实现了80%以上的转换效率。
High surface area mesoporous anatase TiO2 spheres are synthesized using ethylene glycol as a template by a solvothermal method. Electron microscopy studies revealed the formation of smooth surfaced mesoporous spheres with uniform size. A high surface area of 221.52 m2 g−1 is obtained for the titanium tetraisopropoxide concentration of 0.5 mL. X-Ray diffraction and Raman analyses revealed the formation of anatase phase TiO2. Uniform deposition of a mesoporous film for a photoanode was achieved by an optimized spray deposition method. The effects of the ruthenium dye-sensitizer N719 and indoline dye-sensitizer D205 on the dye sensitized solar cell performance are investigated. Maximum efficiencies of 8.96 and 9.02% are achieved using the sensitizers N719 and D205, respectively; from the mesoporous anatase TiO2 sphere coated DSSC. IPCE analyses revealed that the mesoporous spheres efficiently collected the incident photons and achieved a conversion efficiency over 80% by internal reflections and a scattering process.