Low threshold compressively strained InGaAs/lnGaAsP quantum well distributed feedback laser at 1.95 /spl mu/m
Low threshold compressively strained InGaAs/lnGaAsP quantum well distributed feedback laser at 1.95 /spl mu/m
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DOI：
10.1049/el:19970707
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发表时间：
1997-06
影响因子：
1.1
通讯作者：
J. Dong;A. Ubukata;K. Matsumoto
中科院分区：
文献类型：
--
作者：
J. Dong;A. Ubukata;K. Matsumoto
用低压金属有机化学气相淀积法制备了应变InGaAs/InGaAsP量子阱分布反馈激光器，其最低阈值为1.95 μ m/s。在10/spl deg/C下阈值电流为4 mA。在10-40/spl deg/C范围内观察到单模操作。最大输出功率为7.2 mW，外微分量子效率为15.9%，特征温度为34 K，边模抑制比为33.7 dB。
The lowest threshold operation of a strained InGaAs/InGaAsP quantum well distributed feedback laser is demonstrated at 1.95 /spl mu/m, fabricated by low pressure metal organic chemical vapour deposition. The threshold current was 4 mA at 10/spl deg/C. Single-mode operation was observed over the range 10-40/spl deg/C. A maximum output power of 7.2 mW was obtained, in addition to an external differential quantum efficiency of 15.9%, a characteristic temperature of 34 K and a side mode suppression ratio of 33.7 dB.