Normally-OFF Diamond Reverse Blocking MESFET
Normally-OFF Diamond Reverse Blocking MESFET
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DOI：
10.1109/ted.2021.3117237
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发表时间：
2021-12-01
影响因子：
3.1
通讯作者：
Jackman, R. B.
中科院分区：
文献类型：
--
作者：
Canas, J.;Pakpour-Tabrizi, A. C.;Jackman, R. B.
肖特基接触已被用来制造正常（关断）的横向反向阻断MESFER的p型（硼掺杂）O-终止单晶金刚石。该器件利用欧姆源极接触，但栅极和漏极接触本质上是肖特基的。目前报道的掺硼p沟道金刚石MESFETs显示出不太吸引人的常通（ON）特性。在此，常关（OFF）晶体管在0.8 V的负V-GS和16 μ Smm（-1）的μ S（g（m））下，在室温（RT）下测得的电流水平近似于1.5 μ Amm（-1）;在425 K的温度下，这些值上升到近似于70 μ Amm（-1）的/Ds和260 μ Smm（-1）的g（m）值。在这两种情况下，测得的栅极漏电流可忽略不计，在本文研究的最大电场（3.7 x 10（5）V/m（-1））下没有明显的击穿。肖特基栅极即使在更高的温度下也能很好地控制沟道。高温工作，常（关）的行为，和金刚石的固有辐射硬度使这种晶体管的恶劣环境应用的前景。
Schottky contacts have been used to fabricate normally-(OFF) lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally-(ON) characteristics. Here, the normally-(OFF) transistor delivered a current level of similar to 1.5 mu Amm(-1) at a negative V-GS of 0.8 V and a transconductance (g(m)) of 16 mu Smm(-1), measured at room temperature (RT); at a temperature of 425 K, these values rose to similar to 70 mu Amm(-1) for /Ds and a g(m) value of 260 mu Smm(-1). In both cases, a negligible gate leakage current was measured with no breakdown apparent at the maximum field investigated here (3.7 x 10(5) V/m(-1)). The Schottky gate demonstrates a well-behaved control of the channel even at higher temperatures. The high-temperature operation, normally-(OFF) behavior, and diamond's inherent radiation hardness make this transistor promising for harsh environment applications.