Investigations of doping via optical pump terahertz-probe spectroscopy
Investigations of doping via optical pump terahertz-probe spectroscopy
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DOI：
10.1109/irmmw-thz.2017.8066895
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发表时间：
2017-08
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通讯作者：
J. Boland;A. Casadei;G. Tütüncouglu;F. Matteini;C. Davies;F. Gaveen;F. Amaduzzi;H. Joyce;L. Herz;A. Fontcuberta i Morral;M. Johnston
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文献类型：
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作者：
J. Boland;A. Casadei;G. Tütüncouglu;F. Matteini;C. Davies;F. Gaveen;F. Amaduzzi;H. Joyce;L. Herz;A. Fontcuberta i Morral;M. Johnston
在半导体纳米线中进行可靠的掺杂对于开发新型光电器件至关重要。在纳米线中掺入掺杂剂可以优化关键的光电性能，如电子迁移率和载流子寿命。因此，深入表征半导体纳米线中的掺杂机制及其对纳米线光电子性能的影响至关重要。然而，由于在纳米线上制造横向接触的相关挑战，通过传统的电方法提取掺杂剂浓度仍然很困难。在这项工作中，我们提出了一种基于光泵太赫兹探针光谱的非接触技术，用于检测半导体纳米线的外在载流子浓度和光电特性。通过提取温度相关的载流子动力学，我们首次证明了可以通过太赫兹光谱确定这些纳米结构中影响载流子迁移率的掺杂活化能和潜在的散射机制。
Reliable doping in semiconductor nanowires is essential for the development of novel optoelectronic devices. Dopant incorporation within the nanowire can allow for optimisation of key optoelectronic properties, such as electron mobility and carrier lifetime. Thus, in-depth characterisation of doping mechanisms in semiconductor nanowires and their effect on the nanowire optoelectronics properties is crucial. However, extraction of the dopant concentration by conventional electrical methods remains difficult due to the associated challenges with fabricating lateral contacts onto the nanowire. In this work, we present a non-contact technique based on optical pump terahertz-probe spectroscopy for examining the extrinsic carrier concentration and optoelectronic properties of semiconductor nanowires. By extracting the temperature-dependent charge carrier dynamics, we show for the first time that the dopant activation energy and underlying scattering mechanisms affecting charge carrier mobility in these nanostructures can be determined via terahertz spectroscopy.