A simple model calculation for XPS, BIS and EELS 4f-excitations in Ce and La compounds
A simple model calculation for XPS, BIS and EELS 4f-excitations in Ce and La compounds
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Ce 和 La 化合物中 XPS、BIS 和 EELS 4f 激发的简单模型计算
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
E. Wuilloud
中科院分区：
文献类型：
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作者：
J. M. Imer;E. Wuilloud
本文提出了基于安德森单杂质模型的Gunnarsson-Schönhammer计算的简化形式。通过假设扩展态的能带具有无限窄的宽度，并利用f能级的高度简并性，这种方法涉及非常简单的形式，只需要基本的数值计算。本文的目的是表明，该模型再现定性的XPS，BIS和EELS 4f-激发的Ce和La系统的主要特征，它提供了一个非常简单的框架来理解不同的参数的单杂质模型如何影响光谱。
A simplified version of the Gunnarsson-Schönhammer calculation based on the singleimpurity model of Anderson is proposed. By assuming that the band of extended states has an infinitely narrow width and by taking advantage of the high degeneracy of thef-level, this approach involves a very simple formalism and requires only elementary numerical calculations. The aim of this paper is to show that this model reproduces qualitatively the main features of XPS, BIS and EELS 4f-excitations of Ce- and La-systems and that it offers a very simple framework to understand how the different parameters of the single impurity model affect the spectra.